Temperature-dependent photoluminescence study of As-doped p-type (Zn0.93Mn0.07)O layer

Thin Solid Films

Volumn 516, Issue 15, 2008, Pages 4889-4893

  Lee, Sejoon ^a   Shon, Yoon ^b   Kim, Deuk Young ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b Dongguk University   (South Korea)

Author keywords

Annealing sputtering; As+ implantation; Temperature dependent photoluminescence; ZnMnO

Indexed keywords

APPROXIMATION THEORY; BOSE-EINSTEIN CONDENSATION; CARRIER CONCENTRATION; CARRIER MOBILITY; EXCITONS; PHONON SCATTERING; PHOTOLUMINESCENCE;

ANNEALING SPUTTERING; BOSE-EINSTEIN APPROXIMATION; EMISSION PARAMETERS; FREE CARRIERS;

OXIDE FILMS;

EID: 42649119805     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.09.013     Document Type: Article

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