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Volumn 131, Issue 4, 2011, Pages 825-828

Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

(10) Sun, Jingchang a,b Feng, Qiuju a,c Bian, Jiming c,d Yu, Dongqi a Li, Mengke a Li, Chengren a Liang, Hongwei c Zhao, Jianze c Qiu, Hong a Du, Guotong b,c

a LIAONING NORMAL UNIVERSITY (China)

b JILIN UNIVERSITY (China)

c DALIAN UNIVERSITY OF TECHNOLOGY (China)

d INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

Author keywords

LED; MOCVD; p ZnO:N n GaN:Si heterojunction; UV electroluminescence

Indexed keywords

C-PLANE SAPPHIRE; CURRENT VOLTAGE; ELECTRON CONCENTRATION; EMISSION PEAKS; FORWARD BIAS; GAN FILM; HETEROJUNCTION STRUCTURES; LED; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; N-TYPE LAYERS; NITROGEN-DOPED; P-TYPE; PHOTOLUMINESCENCE SPECTRUM; RECTIFYING BEHAVIORS; REVERSE BREAKDOWN VOLTAGE; ROOM TEMPERATURE; TURN ON VOLTAGE; ULTRA-VIOLET; ULTRAVIOLET ELECTROLUMINESCENCE; UV ELECTROLUMINESCENCE; ZNO;

DISTILLATION; GALLIUM NITRIDE; HETEROJUNCTIONS; HOLE CONCENTRATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; ZINC OXIDE;

ELECTROLUMINESCENCE;

EID: 79952311994 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2010.12.013 Document Type: Article

Times cited : (23)

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