Equilibrium potential of free charge carriers in a bent piezoelectric semiconductive nanowire

Nano Letters

Volumn 9, Issue 3, 2009, Pages 1103-1110

  Gao, Yifan ^a   Wang, Zhong Lin ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING FORCES; CONDUCTION BAND ELECTRONS; DONOR CONCENTRATIONS; EQUILIBRIUM POTENTIALS; FREE CHARGE CARRIERS; PIEZOELECTRIC POTENTIALS; POTENTIAL PROFILES; SEMICONDUCTIVE; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; THEORETICAL RESULTS; THERMODYNAMIC EQUILIBRIUM; ZNO NANOWIRES;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; NANOWIRES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

CHARGE CARRIERS;

NANOTUBE; NANOWIRE; ZINC OXIDE;

ALGORITHM; ARTICLE; CHEMISTRY; COMPUTER SIMULATION; ELECTRON; INSTRUMENTATION; KINETICS; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; STATISTICAL MODEL; TEMPERATURE; THEORETICAL MODEL;

ALGORITHMS; COMPUTER SIMULATION; ELECTRONS; KINETICS; MODELS, STATISTICAL; MODELS, THEORETICAL; NANOTECHNOLOGY; NANOTUBES; NANOWIRES; SEMICONDUCTORS; TEMPERATURE; ZINC OXIDE;

EID: 65249183318     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803547f     Document Type: Article

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