Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Materials Letters

Volumn 71, Issue , 2012, Pages 18-20

  Ding, Ping ^a   Pan, Xinhua ^a,b   Huang, Jingyun ^a   Lu, Bin ^a   Zhang, Honghai ^a   Chen, Wei ^a   Ye, Zhizhen ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

Epitaxial growth; Non polar; p Type conductivity; Structural; ZnO

Indexed keywords

A-PLANE; DEEP LEVEL EMISSION; NEAR BAND EDGE EMISSIONS; NON-POLAR; OPTICAL QUALITIES; P-TYPE; P-TYPE CONDUCTIVITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SAPPHIRE SUBSTRATES; STRUCTURAL; ZNO; ZNO FILMS; ZNO THIN FILM;

EPITAXIAL FILMS; EPITAXIAL GROWTH; HALL MOBILITY; HOLE CONCENTRATION; METALLIC FILMS; MOLECULAR BEAM EPITAXY; OPTICAL FILMS; SAPPHIRE; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 84855170308     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2011.12.030     Document Type: Article

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