Formation mechanism and properties of in, P codoped p-type ZnO thin film

Chinese Journal of Luminescence

Volumn 30, Issue 1, 2009, Pages 12-18

  Chen, Zu Hong ^a,b   Yao, Bin ^a,c   Zheng, Chang Ji ^a,b   Yang, Tong ^c   Zhao, Ting Ting ^c   Shan, Chong Xin ^a   Zhang, Zhen Zhong ^a   Li, Bing Hui ^a   Zhang, Ji Ying ^a   Shen, De Zhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

Codoping; RF magnetron sputtering; XPS; ZnO

Indexed keywords

EID: 62349132059     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)

1. Chen Y, Bagnall D, Yao T. ZnO as a novel photonic material for the UV region [J]. Mater. Sci. Eng. B, 2000, 75(2-3) :190-198.
2. Look D C. Recent advances in ZnO materials and devices [J]. Mater. Sci. Eng. B, 2001, 80(1-3):383-387.
3. Tiburcio-Silver A, Joubert J C, Labeau M. Études sur la croissance, la structure et la composition de couches minces de ZnO et ZnO dopé a l'indium, obtenues par procédé pyrosol [J]. Thin Solid Films., 1991, 197(1-2):195-214.
4. Morinaga Y, Sakuragi K, Fujimura N, et al. Effect of Ce doping on the growth of ZnO thin films [J]. J. Cryst. Growth, 1997, 174(1-4):691-695.
5. Look D C, Hemsky J W, Sizelove J R. Residual native shallow donor in ZnO [J]. Phys. Rev. Lett., 1999, 82(12): 2552-2555.
6. Van de Walle C G. Hydrogen as a cause of doping in zinc oxide [J]. Phys. Rev. Lett., 2000, 85(5):1012-1015.
7. Zhang S B, Wei S H, Zunger A. Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO [J]. Phys. Rev. B, 2001, 63(7):075205-1-7.
8. Ip K, Overberg M E, Heo Y W, et al. Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO [J]. Appl. Phys. Lett., 2003, 82(3):385-387.
9. Ip K, Overberg M E, Heo Y W, et al. Thermal stability of ion-implanted hydrogen in ZnO [J]. Appl. Phys. Lett., 2002, 81(21):3996-3998.
10. Kamiska E, Piotrowska A, Kossut J, et al. p-type conducting ZnO: fabrication and characterization [J]. Phys. Status Solidi, C, 2005, 2(3):1119-1124.
11. Li X, Yan Y, Gessert T A, et al. Chemical vapor deposition-formed p-type ZnO thin films [J]. J. Vac. Sci. Technol. A, 2003, 21(4):1342-1346.
12. Hwang D K, Kim H S, Lim J H, et al. Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering [J]. Appl. Phys. Lett., 2005, 86(15):151917-1-3.
13. Kim K K, Kim H S, Hwang D K, et al. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J]. Appl. Phys. Lett., 2003, 83(1):63-65.
14. Ryu Y R, Lee T S. White H W. Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition [J]. Appl. Phys. Lett., 2003, 83(1):87-89.
15. Sun Lijie, Zhang Sheng, Zhang Weiying, et al. Electric and optical properties of Ag doped p-type ZnO films and its homojunction properties [J]. Chin. J. Lumin., 2008, 29(2):304-308 (in Chinese).
16. Wang Jingwei, Bian Jiming, Liang Hongwei, et al. The effect of Ag doping on the optical and electrical properties of ZnO films [J]. Chin. J. Lumin., 2008, 29(3):460-464 (in Chinese).
17. Chen L L, Lu J G, Ye Z Z, et al. p-type behavior in In-N codoped ZnO thin films [J]. Appl. Phys. Lett., 2005, 87 (25):252106-1-3.
18. Nakahara K, Takasu H, Fons P, et al. Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy [J]. Appl. Phys. Lett., 2001, 79(25):4139-4141.
19. Su Jianfeng, Yao Ran, Zhong Ze, et al. Studies on the growth and photoelectric-properties of RF-assisted N doped ZnO films [J]. Chin. J. Lumin. 2008, 29(2):299-303 (in Chinese).
20. 2 used during MOCVD-growth on the properties of N-doped ZnO [J]. Chin. J. Lumin., 2008, 29(3):441-446 (in Chinese).
21. Shan Zhengping, Gu Shulin, Zhu Slumming, et al. The Ni/Au contact to N-doped ZnO [J]. Chin. J. Lumin., 2008, 29(3):503-507 (in Chinese).
22. Yamamoto T, Katayama-Yoshida H. Unipolarity of ZnO with a wide-band gap and its solution using codoping method [J]. J. Cryst. Growth., 2000, 214-215:552-555.
23. Ye J D, Gu S L, Li F, et al. Correlation between carrier recombination and p-type doping in P monodoped and In-P codoped ZnO epilayers [J]. Appl. Phys. Lett., 2007, 90(15):152108-1-3.
24. Yuan Ningyi, Li Jinhua, Fan Lining, et al. Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method [J]. J. Crystal Growth., 2006, 290(1):156-160.
25. Lu J G, Ye Z Z, Zhuge F, et al. p-type conduction in N-Al co-doped ZnO thin films [J]. Appl. Phys. Lett., 2004, 85 (15):3134-3136.
26. Onyiriuka E C. Zinc phosphate glass surfaces studied by XPS [J]. J. Non-cryst. Solids, 1993, 163(3):268-273.
27. Lee Woo-Jin, Kang Joongoo, Chang K J. Defect properties and p-type doping efficiency in phosphorus-doped ZnO[J]. Phys. Rev. B, 2006, 73(2):024117-1-6.
28. Kwon B J, Kwack H S, Lee S K, et al. p-type conduction in N-Al co-doped ZnO thin films [J]. Appl. Phys. Lett., 2007, 91(6):061903-1-3.
29. Wang L J, Giles N C. Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy [J]. J. Appl. Phys., 2003, 94(2):973-979.