Electrical and structural properties of p-type ZnO:N thin films prepared by plasma enhanced chemical vapour deposition

Semiconductor Science and Technology

Volumn 20, Issue 8, 2005, Pages 796-800

  Xiao, Zhiyan ^a,b   Liu, Yichun ^c   Zhang, Jiying ^a   Zhao, Dongxu ^a   Lu, Youming ^a   Shen, Dezhen ^a   Fan, Xiwu ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; NITROGEN; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; THIN FILMS;

ACTIVATED NITROGEN; ELECTRICAL CHARACTERIZATION; OXIDIZATION; THERMAL OXIDATION;

ZINC OXIDE;

EID: 22844447614     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/8/027     Document Type: Article

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