Effect of oxygen partial pressure ratios on the properties of Al-N co-doped ZnO thin films

Journal of Crystal Growth

Volumn 274, Issue 1-2, 2005, Pages 178-182

  Ye, Zhi Zhen ^a   Qian, Qing ^a   Yuan, Guo Dong ^a   Zhao, Bing Hui ^a   Ma, De Wei ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Co doping; A1. p Type conduction; A3. DC magnetron reactive sputtering; B2. Semiconducting II VI materials

Indexed keywords

BAND GAPS; CO-DOPING; HOMO-JUNCTIONS;

ENERGY GAP; MAGNETRON SPUTTERING; OXYGEN; PARTIAL PRESSURE; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

THIN FILMS;

EID: 11144279338     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.018     Document Type: Article

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