ZnO/MgZnO p-n junction light-emitting diodes fabricated on sapphire substrates by pulsed laser deposition technique

Journal of Physics D: Applied Physics

Volumn 42, Issue 7, 2009, Pages

  Shukla, Gaurav ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CURRENT DENSITY; DOPING (ADDITIVES); FABRICATION; GALLIUM; LIGHT; LIGHT EMISSION; PHOSPHORUS; PULSED LASER DEPOSITION; QUANTUM WELL LASERS; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; ZINC; ZINC OXIDE;

ACTIVE LAYERS; AMBIENT AIRS; C-PLANE SAPPHIRE SUBSTRATES; LATTICE-MATCHING; LIGHT EMITTING DIODE LEDS; MULTIPLE QUANTUM WELLS; N-TYPE DOPING; P TYPES; P-DOPED ZNO; P-N JUNCTIONS; P-TYPE ZNO LAYERS; PULSED-LASER DEPOSITION TECHNIQUES; ROOM TEMPERATURES; SAPPHIRE SUBSTRATES; STRUCTURAL CHARACTERIZATIONS; SURFACE CONDUCTIONS; ZNO/MGZNO;

LIGHT EMITTING DIODES;

EID: 63649141783     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/7/075105     Document Type: Article

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