Magnetotransport properties of p -type carbon-doped ZnO thin films

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Herng, T S ^a   Lau, S P ^b   Wang, L ^c   Zhao, B C ^c   Yu, S F ^a   Tanemura, M ^d   Akaike, A ^d   Teng, K S ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^e SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS HALL EFFECTS; C FILMS; CARBON ATOMS; CARRIER SPIN POLARIZATION; DOPED ZNO; ION BEAM TECHNIQUE; MAGNETO TRANSPORT PROPERTIES; NEGATIVE MAGNETO-RESISTANCE; P-TYPE; P-TYPE CONDUCTION; ROOM TEMPERATURE; ZNO;

ELECTRIC RESISTANCE; HALL EFFECT; HOLE CONCENTRATION; ION BEAMS; MAGNETIC FIELD EFFECTS; MAGNETIC MOMENTS; MAGNETORESISTANCE; SEMICONDUCTING ZINC COMPOUNDS; SPIN DYNAMICS; THIN FILMS; ZINC OXIDE;

CARBON FILMS;

EID: 67650470305     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3176434     Document Type: Article

References (12)

1. G. A. Prinz, Science 0036-8075 282, 1660 (1998). 10.1126/science.282. 5394.1660
2. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 0036-8075 287, 1019 (2000). 10.1126/science.287.5455.1019
3. C. Liu, F. Yun, and H. Morkoc, J. Mater. Sci.: Mater. Electron. 0957-4522 16, 555 (2005). 10.1007/s10854-005-3232-1
4. H. Pan, J. B. Yi, L. Shen, R. Q. Wu, J. H. Yang, J. Y. Lin, Y. P. Feng, J. Ding, L. H. Van, and J. H. Yin, Phys. Rev. Lett. 0031-9007 99, 127201 (2007). 10.1103/PhysRevLett.99.127201
5. H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima, T. Chikyow, T. Hasegawa, H. Koinuma, and M. Kawasaki, Nature Mater. 1476-1122 3, 221 (2004). 10.1038/nmat1099
6. Y. G. Wang, S. P. Lau, H. W. Lee, S. F. Yu, B. K. Tay, X. H. Zhang, K. Y. Tse, and H. H. Hng, J. Appl. Phys. 0021-8979 94, 1597 (2003). 10.1063/1.1592007
7. R. D. Shannon, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 0567-7394 32, 751 (1976). 10.1107/S0567739476001551
8. M. Foygel, R. D. Morris, and A. G. Petukhov, Phys. Rev. B 0163-1829 67, 134205 (2003). 10.1103/PhysRevB.67.134205
9. F. E. Maranzana, Phys. Rev. 160, 421 (1967). 10.1103/PhysRev.160.421
10. X. Peng and R. Ahuja, Appl. Phys. Lett. 0003-6951 94, 102504 (2009). 10.1063/1.3095601
11. P. M. Levy and S. Zhang, Phys. Rev. Lett. 0031-9007 79, 5110 (1997). 10.1103/PhysRevLett.79.5110
12. A. Urushibara, Y. Moritomo, T. Arima, A. Asamitsu, G. Kido, and Y. Tokura, Phys. Rev. B 0163-1829 51, 14103 (1995). 10.1103/PhysRevB.51.14103