SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 24, Issue 10, 2009, Pages

Realization of As-doped p-type ZnO thin films using sputter deposition

(4) Choi, Hyung Kyu a Park, Jang Ho a Jeong, Sang Hun b Lee, Byung Teak a

a Chonnam National University (South Korea)

b Korea Basic Science Institute (KBSI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ACCEPTOR-BOUND EXCITONS; AS-GROWN; ELECTROLUMINESCENCE SPECTRA; FREE ELECTRON; HETEROSTRUCTURES; HIGH RESOLUTION; LOW TEMPERATURE PHOTOLUMINESCENCE; OXYGEN ATMOSPHERE; P TYPE ZNO; P TYPE ZNO THIN FILM; P-N DIODE; P-TYPE ZNO FILM; PL SPECTRA; UV EMISSIONS; VISIBLE LIGHT; ZNO;

ARSENIC; DEPOSITION; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; HOLE CONCENTRATION; LIGHT; METALLIC FILMS; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350647335 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/24/10/105003 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.