SCOPUS 정보 검색 플랫폼

Materials Chemistry and Physics

Volumn 126, Issue 1-2, 2011, Pages 54-57

Structural properties of P-doped ZnO

(3) Huong, Ngo Thu a Tuyen, Nguyen Viet a Hong, Nguyen Hoa b

a VIETNAM NATIONAL UNIVERSITY (Viet Nam)

b Seoul National University (South Korea)

Author keywords

Doping; Nanomaterials; Semiconductors; Structure

Indexed keywords

AGING EFFECTS; CERAMIC SAMPLES; DEPOSITION CONDITIONS; DOPING; GAS FLOWS; NANOMATERIALS; P-DOPED ZNO; P-TYPE; SEMICONDUCTORS; STRUCTURE; SUBSTRATE TEMPERATURE; THERMAL EVAPORATION TECHNIQUE; X-RAY SPECTRA; ZNO;

CERAMIC MATERIALS; HOLE CONCENTRATION; NANOSTRUCTURED MATERIALS; PHOSPHORUS; SEMICONDUCTOR DOPING; WIRE; ZINC OXIDE;

THERMAL EVAPORATION;

EID: 78751626775 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/j.matchemphys.2010.12.012 Document Type: Article

Times cited : (10)

References (11)

1
- 33744809266
- J.G. Lu, Y.Z. Zhang, Z.Z. Ye, L.P. Zhu, B.H. Zhao, and Q.L. Liang Appl. Phys. Lett. 88 2006 222114
- (2006) Appl. Phys. Lett. , vol.88 , pp. 222114
- Lu, J.G.¹ Zhang, Y.Z.² Ye, Z.Z.³ Zhu, L.P.⁴ Zhao, B.H.⁵ Liang, Q.L.⁶

2
- 33645138287
- V. Vaithianathan, B.T. Lee, C.H. Chang, K. Asokan, and S.S. Kim Appl. Phys. Lett. 88 2006 112103
- (2006) Appl. Phys. Lett. , vol.88 , pp. 112103
- Vaithianathan, V.¹ Lee, B.T.² Chang, C.H.³ Asokan, K.⁴ Kim, S.S.⁵

3
- 0034635396
- T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand Science 287 2000 1019
- (2000) Science , vol.287 , pp. 1019
- Dietl, T.¹ Ohno, H.² Matsukura, F.³ Cibert, J.⁴ Ferrand, D.⁵

4
- 0010059052
- S.B. Zhang, S.H. Wei, and A. Zunger Phys. Rev. B 63 2001 075205
- (2001) Phys. Rev. B , vol.63 , pp. 075205
- Zhang, S.B.¹ Wei, S.H.² Zunger, A.³

5
- 41349108266
- L.J. Mandalapu, Z. Zhang, S. Chu, and J.L. Liu Appl. Phys. Lett. 92 2008 122101 and references therein
- (2008) Appl. Phys. Lett. , vol.92 , pp. 122101
- Mandalapu, L.J.¹ Zhang, Z.² Chu, S.³ Liu, J.L.⁴

6
- 77953793185
- K. Tang, S. Gu, K. Wu, S. Zhu, J. Ye, R. Zhang, and Y. Zheng Appl. Phys. Lett. 96 2010 242101
- (2010) Appl. Phys. Lett. , vol.96 , pp. 242101
- Tang, K.¹ Gu, S.² Wu, K.³ Zhu, S.⁴ Ye, J.⁵ Zhang, R.⁶ Zheng, Y.⁷

7
- 0042842376
- K.K. Kim, H.S. Kim, D.K. Hwang, J.H. Lim, and S.J. Park Appl. Phys. Lett. 83 2003 63
- (2003) Appl. Phys. Lett. , vol.83 , pp. 63
- Kim, K.K.¹ Kim, H.S.² Hwang, D.K.³ Lim, J.H.⁴ Park, S.J.⁵

8
- 31944446414
- F.X. Xiu, Z. Yang, L.J. Mandalapu, J.L. Liu, and W.P. Beyermann Appl. Phys. Lett. 88 2006 052106
- (2006) Appl. Phys. Lett. , vol.88 , pp. 052106
- Xiu, F.X.¹ Yang, Z.² Mandalapu, L.J.³ Liu, J.L.⁴ Beyermann, W.P.⁵

9
- 18744365851
- V. Vaithianathan, B.T. Lee, and S.S. Kim Appl. Phys. Lett. 86 2005 062101
- (2005) Appl. Phys. Lett. , vol.86 , pp. 062101
- Vaithianathan, V.¹ Lee, B.T.² Kim, S.S.³

10
- 34250640767
- W. Guo, A. Allenic, Y.B. Chen, X.Q. Pan, Y. Che, Z.D. Hu, and B. Liu Appl. Phys. Lett. 90 2007 242108
- (2007) Appl. Phys. Lett. , vol.90 , pp. 242108
- Guo, W.¹ Allenic, A.² Chen, Y.B.³ Pan, X.Q.⁴ Che, Y.⁵ Hu, Z.D.⁶ Liu, B.⁷

11
- 33747865052
- Q. Wan Appl. Phys. Lett 89 2006 082515
- (2006) Appl. Phys. Lett , vol.89 , pp. 082515
- Wan, Q.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.