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Advanced Materials

Volumn 18, Issue 20, 2006, Pages 2720-2724

UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

(6) Lim, Jae Hong a Kong, Chang Ku a Kim, Kyoung Kook a,b Park, Il Kyu a Hwang, Dae Kue a Park, Seong Ju a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; SEMICONDUCTOR GROWTH; SPUTTERING; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION; ZINC OXIDE;

CARRIER RECOMBINATION; DEEP-LEVEL EMISSION; ENERGY BARRIER LAYERS; NEAR-BANDEDGE EMISSION;

LIGHT EMITTING DIODES;

EID: 33750513795 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200502633 Document Type: Article

Times cited : (658)

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