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Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode

(6) Chu, Sheng a Zhao, Jianze a,b Zuo, Zheng a Kong, Jieying a Li, Lin a Liu, Jianlin a

a UNIVERSITY OF CALIFORNIA (United States)

b DALIAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; CARRIER CONFINEMENTS; DOUBLE HETEROSTRUCTURES; HALL EFFECT MEASUREMENT; HOMOJUNCTION; INTRINSIC LAYER; N-TYPE LAYERS; OUTPUT POWER; P TYPE ZNO; P-TYPE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SB-DOPED; ULTRAVIOLET EMISSION; ZNO; ZNO LAYERS;

DIODES; HALL EFFECT; HOLE CONCENTRATION; LIGHT EMITTING DIODES; OHMIC CONTACTS; ZINC OXIDE;

LIGHT EMISSION;

EID: 79960171356 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3598136 Document Type: Article

Times cited : (32)

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