Nitrogen-doped p-type ZnO thin films and ZnO/ZnSe p-n heterojunctions grown on ZnSe substrate by radical beam gettering epitaxy

Thin Solid Films

Volumn 517, Issue 15, 2009, Pages 4318-4321

  Rogozin, I V ^a  

^a BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

Author keywords

Atomic force microscopy; Hall effect measurements; Nitrogen doping; Photoluminescence; Secondary ion mass spectroscopy; X ray diffraction; Zinc oxide

Indexed keywords

CONCENTRATION OF; EMISSION PEAKS; GETTERING; HALL-EFFECT MEASUREMENTS; N-DOPED; NEUTRAL ACCEPTORS; NITROGEN ACCEPTORS; NITROGEN DOPANTS; NITROGEN DOPING; NITROGEN-DOPED; OXYGEN SOURCES; P-N HETEROJUNCTIONS; P-TYPE DOPING; P-TYPE ZNO FILMS; P-TYPE ZNO THIN FILMS; PHOTOLUMINESCENCE SPECTRUM; RADICAL BEAMS; SECONDARY ION MASS SPECTROSCOPY; TEMPERATURE DEPENDENTS; TURN-ON VOLTAGES; ZNO; ZNO FILMS;

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL GROWTH; DIFFRACTION; EMISSION SPECTROSCOPY; HALL EFFECT; HOLE CONCENTRATION; HOLE MOBILITY; IONS; MAGNETIC FIELD EFFECTS; MASS SPECTROMETERS; METALLIC FILMS; NITROGEN; OXYGEN; PHOTOLUMINESCENCE; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 67349118915     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.12.002     Document Type: Article

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