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Applied Physics Letters

Volumn 98, Issue 4, 2011, Pages

ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

(6) Wang, Guoping a Chu, Sheng a Zhan, Ning a Lin, Yuqing b Chernyak, Leonid b Liu, Jianlin a

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF CENTRAL FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-BEAM-INDUCED CURRENT; HOMOJUNCTION; INDIUM TIN OXIDE; IV CHARACTERISTICS; NANOWIRE ARRAYS; P-N HOMOJUNCTIONS; P-TYPE; P-TYPE CONDUCTIVITY; PHOTOCURRENT MEASUREMENT; SB-DOPED; TURN ON VOLTAGE; ULTRA VIOLET DETECTION; ULTRA-VIOLET LIGHT; ZNO; ZNO NANOWIRES; ZNO P-N HOMOJUNCTIONS;

ANTIMONY; CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; DISTILLATION; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; INDIUM; INDIUM COMPOUNDS; TIN; TIN OXIDES; ULTRAVIOLET RADIATION; ZINC OXIDE;

NANOWIRES;

EID: 79551633877 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3551628 Document Type: Article

Times cited : (91)

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