Excitonic ultraviolet lasing in ZnO-based light emitting devices

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Ryu, Y R ^a   Lubguban, J A ^a   Lee, T S ^a   White, H W ^b   Jeong, T S ^c   Youn, C J ^c   Kim, B J ^d  

^a MOXtronics Inc   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

^c Chonbuk National University   (South Korea)

^d NINEX Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONFINEMENT LAYERS; CURRENT INJECTION; LASING MECHANISM;

BINDING ENERGY; METALLIC FILMS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 34047151793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2718516     Document Type: Article

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