SCOPUS 정보 검색 플랫폼

Volumn 25, Issue 12, 2008, Pages 4345-4347

Realization of ultraviolet electroluminescence from ZnO homojunction fabricated on silicon substrate with p-type ZnO:N layer formed by radical N 2O doping

(8) Sun, Jing Chang a Liang, Hong Wei a Zhao, Jian Ze a Bian, Ji Ming a Feng, Qiu Ju a Wang, Jing Wei a Zhao, Zi Wen a Du, Guo Tong a

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; FABRICATION; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES; ZINC OXIDE;

DOPED ZNO; HOMO-JUNCTIONS; LIGHTEMITTING DIODE; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; N LAYERS; P-TYPE; P-TYPE LAYERS; SILICON SUBSTRATES; ULTRAVIOLET ELECTROLUMINESCENCE; ZNO FILMS;

II-VI SEMICONDUCTORS;

EID: 58449118661 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/25/12/045 Document Type: Article

Times cited : (10)

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