A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation

Applied Physics Letters

Volumn 93, Issue 25, 2008, Pages

  Yang, Y ^a,b   Sun, X W ^a,c   Tay, B K ^a   You, G F ^a   Tan, S T ^c   Teo, K L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CURRENT DENSITY; ELECTROLUMINESCENCE; ION BOMBARDMENT; ION IMPLANTATION; IONS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; ZINC OXIDE;

AMPLIFIED SPONTANEOUS EMISSIONS; EL EMISSIONS; EMISSION INTENSITIES; FORWARD BIASES; HIGH EFFICIENCIES; HOMO JUNCTIONS; LIGHT EMITTING DIODE LEDS; RED ELECTROLUMINESCENCES; ROOM TEMPERATURES; ZNO NANORODS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 58149170319     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3054639     Document Type: Article

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