In-N codoped p-type ZnMgO thin films with bandgap engineering

Vacuum

Volumn 85, Issue 3, 2010, Pages 365-367

  Gong, L ^a   Ye, Z Z ^a   Lu, J G ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

In N codoping; Magnetron sputtering; Thin film; ZnMgO

Indexed keywords

BAND GAP ENGINEERING; CO-DOPED; CO-DOPING; DIRECT CURRENT; MG CONTENT; P-TYPE; REACTIVE MAGNETRON SPUTTERING; ZNMGO;

ENERGY GAP; THIN FILMS; VAPOR DEPOSITION; ZINC;

MAGNETRON SPUTTERING;

EID: 77957752105     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.07.009     Document Type: Article

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