Minority carrier transport in p-ZnO nanowires

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Lin, Y ^a   Shatkhin, M ^a   Flitsiyan, E ^a   Chernyak, L ^a   Dashevsky, Z ^b   Chu, S ^c   Liu, J L ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^c University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; ELECTRON BEAM IRRADIATION; ELECTRON-BEAM-INDUCED CURRENT; MINORITY CARRIER DIFFUSION LENGTH; P-TYPE; SB-DOPED; THERMALLY ACTIVATED; ZINC OXIDE NANOWIRES; ZNO NANOWIRES;

DIFFUSION; ELECTRON BEAMS; NANOWIRES; ZINC OXIDE;

ACTIVATION ENERGY;

EID: 78751557427     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3530732     Document Type: Article

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