Optical and electrical properties of p-type ZnO fabricated by NH 3 plasma post-treated ZnO thin films

Applied Surface Science

Volumn 254, Issue 9, 2008, Pages 2900-2904

  Cao, P ^a,b   Zhao, D X ^a   Zhang, J Y ^a   Shen, D Z ^a   Lu, Y M ^a   Yao, B ^a   Li, B H ^a   Bai, Y ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

NH 3 plasma; Nitrogen doping; p type ZnO

Indexed keywords

BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

EMISSION PEAKS; LOW TEMPERATURE PHOTOLUMINESCENCE SPECTRA; N-RELATED ACCEPTOR BINDING ENERGY;

ZINC OXIDE;

EID: 38949191332     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.10.056     Document Type: Article

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