Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1830-1832

  Look, D C ^a   Reynolds, D C ^a   Litton, C W ^b   Jones, R L ^b   Eason, D B ^c   Cantwell, G ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Eagle Picher Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVITY MEASUREMENTS; HOMOEPITAXIAL; N-DOPED; NEUTRAL ACCEPTOR BOUND EXCITONS; NEUTRAL DONOR; P TYPE ZNO; P-TYPE ZNO LAYERS; PHOTOLUMINESCENCE MEASUREMENTS; SECONDARY-ION MASS SPECTROSCOPY; SEMI-INSULATING; SURFACE CONCENTRATION; ZNO; ZNO SUBSTRATE;

EPITAXIAL GROWTH; EXCITONS; HIGH ELECTRON MOBILITY TRANSISTORS; HOLE CONCENTRATION; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY;

ZINC OXIDE;

EID: 79958230334     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504875     Document Type: Article

References (31)

1. Y. Chen, D. Bagnall, and T. Yao, Mater. Sci. Eng., B 75, 190 (2000). msb MSBTEK 0921-5107
2. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001). msb MSBTEK 0921-5107
3. K. Minegishi, Y. Koiwai, and K. Kikuchi, Jpn. J. Appl. Phys. 36, L1453 (1997). jjc JAPLD8 0021-4922
4. Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Joeng, and H. W. White, J. Cryst. Growth 216, 330 (2000). jcr JCRGAE 0022-0248
5. M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai, Physica B 302-303, 140 (2001). phb PHYBE3 0921-4526
6. X. -L. Guo, H. Tabata, and T. Kawai, J. Cryst. Growth 223, 135 (2001). jcr JCRGAE 0022-0248
7. T. V. Butkhuzi, M. M. Sharvashidze, N. M. Gamkrelidze, Kh. V. Gelovani, T. G. Khulordava, N. P. Kekelidze, and E. E. Kekelidze, Semicond. Sci. Technol. 16, 575 (2001). sst SSTEET 0268-1242
8. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38, L166 (1999). jjc JAPLD8 0021-4922
9. Y. Yan, S. B. Zhang, and S. T. Pantelides, Phys. Rev. Lett. 86, 5723 (2001). prl PRLTAO 0031-9007
10. S. B. Zhang, S. -H. Wei, and A. Zunger, Phys. Rev. B 63, 075205 (2001). prb PRBMDO 0163-1829
11. F. Oba, S. R. Nishitani, S. Isotani, H. Adachi, and I. Tanaka, J. Appl. Phys. 90, 824 (2001). jap JAPIAU 0021-8979
12. E. -C. Lee, Y. -S. Kim, Y.- G. Jin, and K. J. Chang, Phys. Rev. B 64, 085120 (2001). prb PRBMDO 0163-1829
13. D. B. Eason and G. Cantwell, in Proceedings of the 2002 International Conference on Solid State Devices and Material (in press).
14. D. B. Eason and G. Cantwell, Compd. Semicord. 8, 15 (2002). cpq COSEFP
15. A. Ohtomo, R. Shiroki, I. Ohkubo, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 4088 (1999). apl APPLAB 0003-6951
16. C. W. Teng, J. F. Muth, Ü. Özgür, M. J. Bergmann, H. O. Everitt, A. K. Sharma, C. Jin, and J. Narayan, Appl. Phys. Lett. 76, 979 (2000). apl APPLAB 0003-6951
17. T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda, and H. Koinuma, Appl. Phys. Lett. 78, 1237 (2001). apl APPLAB 0003-6951
18. Eagle-Picher Technologies, 200 BJ Tunnell Blvd., Miami, OK74354.
19. D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwell, and W. C. Harsch, Solid State Commun. 105, 399 (1998). ssc SSCOA4 0038-1098
20. A. Valentini, F. Quaranta, M. Rossi, and G. Battaglin, J. Vac. Sci. Technol. A 9, 286 (1991). jva JVTAD6 0734-2101
21. L. Svob, C. Thiandoume, A. Lusson, M. Bouanani, Y. Marfaing, and O. Gorochov, Appl. Phys. Lett. 76, 1695 (2000). apl APPLAB 0003-6951
22. D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).
23. Evans East, 104 Windsor Center, Suite 101, East Windsor, NJ08520.
24. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. Harsch, and G. Cantwell, Phys. Rev. B 57, 12151 (1998). prb PRBMDO 0163-1829
25. J. Gutowski, N. Presser, and I. Broser, Phys. Rev. B 38, 9746 (1988). prb PRBMDO 0163-1829
26. K. Thonke, Th. Gruber, N. Teofilov, R. Schönfelder, A. Waag, and R. Sauer, Physica B 308-310, 945 (2001). phb PHYBE3 0921-4526
27. D. C. Look, R. L. Jones, J. R. Sizelove, N. Y. Garces, N. C. Giles, and L. E. Halliburton, Phys. Status Solidi A (in press).
28. B. J. Skromme and G. L. Martinez, MRS Internet J. Semicond. Res. 5S1, W9.8 (2000).
29. A. K. Rice and K. J. Malloy, J. Appl. Phys. 89, 2816 (2001). jap JAPIAU 0021-8979
30. M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski, Phys. Rev. B 63, 125203 (2001). prb PRBMDO 0163-1829
31. U. Kaufmann, P. Schlotter, H. Obloh, K. Köhler, and M. Maier, Phys. Rev. B 62, 10867 (2000). prb PRBMDO 0163-1829