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Journal of Crystal Growth

Volumn 326, Issue 1, 2011, Pages 85-89

Annealing effect on conductivity behavior of Lidoped ZnO thin film and its application as ZnO-based homojunction device

(3) Tsai, Shu Yi a Hon, Min Hsiung a Lu, Yang Ming b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL UNIVERSITY OF TAINAN (Taiwan)

Author keywords

A1. Low resistivity; A1. RF magnetron sputtering; B1. ZnO

Indexed keywords

ADVANCED TECHNOLOGY; ANNEALING EFFECTS; ANNEALING TEMPERATURES; HOMOJUNCTION; LOW RESISTIVITY; P-N HOMOJUNCTIONS; P-TYPE CONDUCTION; P-TYPE DOPING; POST-ANNEALING TEMPERATURE; PREFERRED ORIENTATIONS; RF MAGNETRON SPUTTERING METHOD; RF-MAGNETRON SPUTTERING; STRUCTURAL AND OPTICAL PROPERTIES; TRANSPARENT ELECTRONICS; TRANSPARENT SEMICONDUCTING OXIDE; VISIBLE REGION; WIDE-BAND-GAP SEMICONDUCTOR; ZNO; ZNO FILMS; ZNO THIN FILM;

ANNEALING; ELECTRIC PROPERTIES; HOLE CONCENTRATION; LITHIUM; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL PROPERTIES; THIN FILM CIRCUITS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 79960186776 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.01.058 Document Type: Conference Paper

Times cited : (22)

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