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Journal of Physics: Conference Series

Volumn 100, Issue PART 4, 2008, Pages

Fabrication of low resistivity p-type ZnO thin films by implanting N + ions

(3) Tsai, Shu Yi a Lu, Yang Ming b Hon, Min Hsiung a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL UNIVERSITY OF TAINAN (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILMS; ENERGY GAP; ION IMPLANTATION; IONS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC OXIDE; II-VI SEMICONDUCTORS; NANOSCIENCE; OXIDE FILMS; OXIDE MINERALS; VACUUM APPLICATIONS;

CONDUCTIVE THIN FILMS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL STABILITY; HALL EFFECT MEASUREMENT; P TYPE ZNO THIN FILM; PREFERRED ORIENTATIONS; REACTIVE MAGNETRON SPUTTERING; TECHNOLOGICAL APPLICATIONS;

OXIDE FILMS; NITROGEN COMPOUNDS;

EID: 77954330858 PISSN: 17426588 EISSN: 17426596 Source Type: Conference Proceeding
DOI: 10.1088/1742-6596/100/4/042037 Document Type: Conference Paper

Times cited : (8)

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