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Volumn 509, Issue 17, 2011, Pages 5426-5430

Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

Author keywords

Magnetron sputtering; p type ZnO; Sb doping

Indexed keywords

ANNEALING PROCESS; AS-GROWN; ELECTRICAL PROPERTY; HIGH OXIDATION STATE; INNER STRESS; P TYPE ZNO; P-TYPE; PL INTENSITY; PREFERRED ORIENTATIONS; SB FILMS; SB-DOPED; SB-DOPING; SI(1 0 0); ULTRAVIOLET EMISSION; WURTZITE STRUCTURE; XPS MEASUREMENTS; XRD; XRD MEASUREMENTS; ZNO; ZNO FILMS;

EID: 79953178189     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.02.080     Document Type: Article
Times cited : (42)

References (30)
  • 29
    • 79953224892 scopus 로고    scopus 로고
    • The melting point of antimony pentoxide is 380 °C (decomposes)
    • The melting point of antimony pentoxide is 380 °C (decomposes), http://en.wikipedia.org/wiki/Antimony-pentoxide.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.