Enhanced p-type ZnO films through nitrogen and argentum codoping grown by ultrasonic spray pyrolysis

Chinese Physics Letters

Volumn 25, Issue 9, 2008, Pages 3400-3402

  Wang, Jing Wei ^a   Bian, Ji Ming ^a   Liangx, Ji Ming ^a   Sun, Jing Chang ^a   Zhao, Jian Ze ^a   Hu, Li Zhong ^a   Luo, Ying Min ^a   Du, Guo Tong ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HALL MOBILITY; II-VI SEMICONDUCTORS; NITROGEN; NITROGEN COMPOUNDS; SEMICONDUCTING FILMS; SPRAY PYROLYSIS; SUBSTRATES; ZINC OXIDE;

CO-DOPED; CO-DOPING; LOW RESISTIVITY; OPTIMIZED CONDITIONS; P TYPE CONDUCTIVITY; P-TYPE; PROPERTY; QUARTZ GLASS SUBSTRATES; ULTRASONIC SPRAY PYROLYSIS; ZNO FILMS;

METALLIC FILMS;

EID: 56349127802     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/9/082     Document Type: Article

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