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Applied Surface Science

Volumn 256, Issue 23, 2010, Pages 7200-7203

Fabrication and characterization of magnetron sputtered arsenic doped p-type ZnO epitaxial thin films

(3) Kumar, Amit a Kumar, Manoj b Singh, Beer Pal c

a Institute of Engineering and Technology (India)

b TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

c CH CHARAN SINGH UNIVERSITY (India)

Author keywords

As doping; Epitaxial growth; Sputtering; ZnO

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; HOLE CONCENTRATION; HOLE MOBILITY; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

AS DOPING; DONOR-ACCEPTOR PAIR EMISSION; EPITAXIAL THIN FILMS; FABRICATION AND CHARACTERIZATIONS; P TYPE ZNO THIN FILM; PHOTOLUMINESCENCE MEASUREMENTS; SAPPHIRE SUBSTRATES; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 77955309198 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.05.050 Document Type: Article

Times cited : (22)

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