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Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method

(7) Lu, J G a Zhang, Y Z a Ye, Z Z a Zhu, L P a Wang, L a Zhao, B H a Liang, Q L b

a ZHEJIANG UNIVERSITY (China)

b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; LITHIUM; NITROGEN; PULSED LASER DEPOSITION; SECONDARY ION MASS SPECTROMETRY; ZINC OXIDE;

CRYSTAL QUALITY; DUAL-ACCEPTOR; INHERENT RECTIFYING BEHAVIORS; P-TYPE ZNO THIN FILMS;

THIN FILMS;

EID: 33744809266 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2209191 Document Type: Article

Times cited : (175)

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