Effect of compressive stress on stability of N-doped p-type ZnO

Applied Physics Letters

Volumn 99, Issue 9, 2011, Pages

  Chen, Xingyou ^a,b   Zhang, Zhenzhong ^a   Yao, Bin ^c   Jiang, Mingming ^a   Wang, Shuangpeng ^a   Li, Binghui ^a   Shan, Chongxin ^a   Liu, Lei ^a   Zhao, Dongxu ^a   Shen, Dezhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GOOD STABILITY; HALL EFFECT MEASUREMENT; LATTICE MISFITS; N-DOPED; NITROGEN-DOPED; P TYPE ZNO; P-TYPE ZINC OXIDE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ZNO;

ALUMINUM; COMPRESSIVE STRESS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN PLASMA; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; PLASMA STABILITY; RAMAN SPECTROSCOPY; TENSILE STRESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC OXIDE;

EID: 80052533419     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3631677     Document Type: Article

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