ZnO p-n junction light-emitting diodes fabricated on sapphire substrates

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Jiao, S J ^a,b   Zhang, Z Z ^a   Lu, Y M ^a   Shen, D Z ^a   Yao, B ^a   Zhang, J Y ^a   Li, B H ^a   Zhao, D X ^a   Fan, X W ^a   Tang, Z K ^c  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DEGRADATION; ELECTROLUMINESCENCE; MOLECULAR BEAM EPITAXY; QUENCHING; SAPPHIRE; THRESHOLD VOLTAGE; ZINC OXIDE;

CURRENT-VOLTAGE MEASUREMENTS; P-N JUNCTION LIGHT-EMITTING DIODMS; RADIO FREQUENCIES; THERMAL QUENCHING;

LIGHT EMITTING DIODES;

EID: 31144475928     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2166686     Document Type: Article

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