p-type doping of ZnO by means of high-density inductively coupled plasmas

Materials Letters

Volumn 63, Issue 12, 2009, Pages 972-974

  Huang, S Y ^a   Xu, S ^a   Chai, J W ^a   Cheng, Q J ^a,b   Long, J D ^a   Ostrikov, K ^b,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF SYDNEY   (Australia)

^c CSIRO   (Australia)

Author keywords

Chemical vapor deposition; Microstructure; Nanomaterials; Semiconductors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTALS; DISTILLATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HALL EFFECT; HOLE CONCENTRATION; INDUCTIVELY COUPLED PLASMA; MAGNETIC FIELD EFFECTS; METALLIC FILMS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PHOTORESISTS; PHYSICAL VAPOR DEPOSITION; PLASMA DEPOSITION; PLASMA INTERACTIONS; PRASEODYMIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS; THIN FILMS; VAPORS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

COLUMNAR STRUCTURES; CRYSTALLOGRAPHIC ORIENTATIONS; CURRENT-VOLTAGE MEASUREMENTS; GLASS SUBSTRATES; GROWTH PROCESS; HEXAGONAL CRYSTAL STRUCTURES; HIGH DENSITIES; INDUCTIVELY COUPLED PLASMA SOURCES; N-DOPED; NANOMATERIALS; P TYPES; P-N HOMOJUNCTION; P-N JUNCTIONS; P-TYPE DOPING; P-TYPE ZNO; PLASMA-SURFACE INTERACTIONS; RADIO-FREQUENCY MAGNETRON SPUTTERING; SCANNING ELECTRONS; SEMICONDUCTORS; TWO LAYERS; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; ZNO;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 62249090218     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.01.047     Document Type: Article

References (13)

1. Song D.Y., Widenborg P., Chin W., and Aberle A.G. Sol Energy Mater Sol Cells 73 (2002) 1-20
2. Lokhande B.J., Patil P.S., and Uplane M.D. Mater Lett 57 (2002) 573-579
3. Cvelbar U., and Mozetič M. J Phys D Appl Phys 40 (2007) 2300-2303
4. Tu M.L., Su Y.K., and Ma C.Y. J Appl Phys 100 (2006) 053705
5. Bian J.M., Li X.M., Zhang C.Y., Yu W.D., and Gao X.D. Appl Phys Lett 85 (2004) 4070-4072
6. Liang H.W., Lu Y.M., Shen D.Z., Liu Y.C., Yan J.F., Shan C.X., et al. Phys Status Solidi A 202 (2005) 1060-1065
7. Xu S., Ostrikov K., Long J.D., and Huang S.Y. Vacuum 80 (2006) 621-630
8. Perkins C.L., Lee S.H., Li X.N., Asher S.E., and Coutts T.J. J Appl Phys 97 (2005) 034907
9. Gabás M., Gota S., Ramos-Barrado J.R., Sánchez M., Barrett N.T., Avila J., et al. Appl Phys Lett 86 (2005) 042104
10. Aoki T., Hatanaka Y., and Look D.C. Appl Phys Lett 76 (2000) 3257-3258
11. Cheng Q.J., Xu S., Long D.J., and Ostrikov K. Appl Phys Lett 90 (2007) 173112
12. Xu S., Ostrikov K.N., Li Y., Tsakadze E.L., and Jones I.R. Phys Plasmas 8 (2001) 2549-2557
13. Ostrikov K. Rev Mod Phys 77 (2005) 489-511