SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 2, 2009, Pages

Formation of stable and reproducible low resistivity and high carrier concentration p -type ZnO doped at high pressure with Sb

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; EFFECT OF PRESSURE; ELECTRICAL PROPERTY; HIGH PRESSURE; LOW RESISTIVITY; P TYPE ZNO; P-TYPE; P-TYPE CONDUCTION; SB-DOPED; ZNO;

BIOACTIVITY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; PRESSURE EFFECTS; SEMICONDUCTING ZINC COMPOUNDS; SINTERING; ZINC;

ZINC OXIDE;

EID: 67650727590 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3153515 Document Type: Article

Times cited : (43)

References (10)

1
- 0000900190
- 0003-6951,. 10.1063/1.125503
- S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, and D. C. Look, Appl. Phys. Lett. 0003-6951 75, 3947 (1999). 10.1063/1.125503
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3947
- Choopun, S.¹ Vispute, R.D.² Noch, W.³ Balsamo, A.⁴ Sharma, R.P.⁵ Venkatesan, T.⁶ Iliadis, A.⁷ Look, D.C.⁸

2
- 0032621147
- 0003-6951,. 10.1063/1.123972
- E. M. Wong and P. C. Searson, Appl. Phys. Lett. 0003-6951 74, 2939 (1999). 10.1063/1.123972
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2939
- Wong, E.M.¹ Searson, P.C.²

3
- 0000535299
- 0003-6951,. 10.1063/1.126207
- H. J. Ko, Y. F. Chen, Z. Zhu, T. Yao, I. Kobayashi, and H. Uchiki, Appl. Phys. Lett. 0003-6951 76, 1905 (2000). 10.1063/1.126207
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1905
- Ko, H.J.¹ Chen, Y.F.² Zhu, Z.³ Yao, T.⁴ Kobayashi, I.⁵ Uchiki, H.⁶

4
- 0010059052
- 0163-1829,. 10.1103/PhysRevB.63.075205
- S. B. Zhang, S. H. Wei, and A. Zunger, Phys. Rev. B 0163-1829 63, 075205 (2001). 10.1103/PhysRevB.63.075205
- (2001) Phys. Rev. B , vol.63 , pp. 075205
- Zhang, S.B.¹ Wei, S.H.² Zunger, A.³

5
- 18244430368
- 0031-9007,. 10.1103/PhysRevLett.85.1012
- C. G. Van de Walle, Phys. Rev. Lett. 0031-9007 85, 1012 (2000). 10.1103/PhysRevLett.85.1012
- (2000) Phys. Rev. Lett. , vol.85 , pp. 1012
- Van De Walle, C.G.¹

6
- 28344440203
- 0003-6951,. 10.1063/1.2089183
- F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, and W. P. Beyermann, Appl. Phys. Lett. 0003-6951 87, 152101 (2005). 10.1063/1.2089183
- (2005) Appl. Phys. Lett. , vol.87 , pp. 152101
- Xiu, F.X.¹ Yang, Z.² Mandalapu, L.J.³ Zhao, D.T.⁴ Liu, J.L.⁵ Beyermann, W.P.⁶

7
- 35948983314
- 0163-1829,. 10.1103/PhysRevB.76.193303
- E. Przedziecka, E. Kamińska, I. Pasternak, A. Piotrowska, and J. Kossut, Phys. Rev. B 0163-1829 76, 193303 (2007). 10.1103/PhysRevB.76.193303
- (2007) Phys. Rev. B , vol.76 , pp. 193303
- Przedziecka, E.¹ Kamińska, E.² Pasternak, I.³ Piotrowska, A.⁴ Kossut, J.⁵

8
- 33847329242
- 0169-4332,. 10.1016/j.apsusc.2006.11.014
- X. H. Pan, Z. Z. Ye, H. S. Li, Y. J. Zeng, X. Q. Gu, L. P. Zhu, B. H. Zhao, and Y. Che, Appl. Surf. Sci. 0169-4332 253, 5067 (2007). 10.1016/j.apsusc.2006.11.014
- (2007) Appl. Surf. Sci. , vol.253 , pp. 5067
- Pan, X.H.¹ Ye, Z.Z.² Li, H.S.³ Zeng, Y.J.⁴ Gu, X.Q.⁵ Zhu, L.P.⁶ Zhao, B.H.⁷ Che, Y.⁸

9
- 0036002001
- 0370-1972,. 10.1002/1521-3951(200201)229:2<911::AID-PSSB911>3.0. CO;2-R
- T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, Phys. Status Solidi B 0370-1972 229, 911 (2002). 10.1002/1521- 3951(200201)229:2<911::AID-PSSB911>3.0.CO;2-R
- (2002) Phys. Status Solidi B , vol.229 , pp. 911
- Aoki, T.¹ Shimizu, Y.² Miyake, A.³ Nakamura, A.⁴ Nakanishi, Y.⁵ Hatanaka, Y.⁶

10
- 2542438239
- 0031-9007,. 10.1103/PhysRevLett.92.155504
- S. Limpijumnong, S. B. Zhang, S. H. Wei, and C. H. Park, Phys. Rev. Lett. 0031-9007 92, 155504 (2004). 10.1103/PhysRevLett.92.155504
- (2004) Phys. Rev. Lett. , vol.92 , pp. 155504
- Limpijumnong, S.¹ Zhang, S.B.² Wei, S.H.³ Park, C.H.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.