Intrinsic p -type ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 6, 2010, Pages 1307-1311

  Huang, Yen Chin ^a   Li, Zhen Yu ^b   Weng, Li Wei ^a   Uen, Wu Yih ^a   Lan, Shan Ming ^a   Liao, Sen Mao ^a   Lin, Tai Yuan ^c   Huang, Yu Hsiang ^d   Chen, Jian Wen ^d   Yang, Tsun Neng ^d  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^d INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION TYPE; DEFECT-RELATED EMISSION; GAS-FLOW RATIO; HALL EFFECT MEASUREMENT; INTRINSIC DEFECTS; LOW TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; P-TYPE; P-TYPE ZNO FILM; PL MEASUREMENTS; REPRODUCIBILITIES; ROOM-TEMPERATURE PHOTOLUMINESCENCE; ZNO FILMS;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; DEFECTS; ELECTRIC PROPERTIES; FABRICATION; HALL EFFECT; INDUSTRIAL CHEMICALS; MAGNETIC FIELD EFFECTS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; ZINC; ZINC OXIDE;

HOLE CONCENTRATION;

EID: 78149463994     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3484138     Document Type: Article

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