Tuning ferromagnetism in Mgx Zn1-x O thin films by band gap and defect engineering

Applied Physics Letters

Volumn 97, Issue 10, 2010, Pages

  Li, Yongfeng ^a,b   Deng, Rui ^a,c   Yao, Bin ^b,c   Xing, Guozhong ^a   Wang, Dandan ^a   Wu, Tom ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DEFECT ENGINEERING; FERROMAGNETIC COUPLING; FIRST PRINCIPLE CALCULATIONS; FORMATION ENERGIES; IN-BAND; MG CONTENT; P-TYPE; P-TYPE BEHAVIORS; ROOM TEMPERATURE FERROMAGNETISM; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ZINC VACANCY;

DEFECTS; ENERGY GAP; FERROMAGNETISM; MAGNETIC PROPERTIES; THIN FILMS;

ZINC;

EID: 77956577412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3485058     Document Type: Article

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