Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H 2O 2 treatment

Materials Chemistry and Physics

Volumn 136, Issue 1, 2012, Pages 179-183

  He, Guan Ru ^a   Lin, Yow Jon ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Defect; Diode; Electrical property; Si; Sol gel; ZnO

Indexed keywords

ADVERSE EFFECT; CURRENT TRANSPORT MECHANISM; ELECTRONIC CONDUCTION; FUNCTIONAL DEVICES; HETEROJUNCTION DIODES; IDEALITY FACTORS; INTERFACIAL DEFECT; LOW LEAKAGE; P TYPE ZNO; RECTIFYING BEHAVIORS; ZNO;

DEFECTS; DIODES; ELECTRIC PROPERTIES; HETEROJUNCTIONS; PASSIVATION; SEMICONDUCTOR DIODES; SOL-GEL PROCESS; SOL-GELS; ZINC OXIDE;

SILICON;

EID: 84865478618     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.06.049     Document Type: Article

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