Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays

Nano Letters

Volumn 10, Issue 11, 2010, Pages 4387-4393

  Chen, Min Teng ^a   Lu, Ming Pei ^b   Wu, Yi Jen ^a   Song, Jinhui ^c   Lee, Chung Yang ^a   Lu, Ming Yen ^a   Chang, Yu Cheng ^a   Chou, Li Jen ^a   Wang, Zhong Lin ^c   Chen, Lih Juann ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Georgia Institute of Technology   (United States)

Author keywords

in situ doped; Near UV LED; p n homojunction; ZnO nanowires

Indexed keywords

BLUE SHIFT; BUILDING BLOCKES; BURSTEIN-MOSS EFFECTS; CATALYST-FREE; ELECTROLUMINESCENCE SPECTRA; ELECTRON CARRIER; EMISSION PEAKS; GROWTH DIRECTIONS; HIGH ELECTRON CONCENTRATION; IN-SITU; IN-SITU DOPING; LIGHTING DEVICES; N-TYPE DOPANTS; NEAR UV LED; OPERATING VOLTAGE; P-N HOMOJUNCTIONS; P-TYPE; PHOTOELECTRONICS; SHORT-WAVELENGTH; SHORT-WAVELENGTH EMISSIONS; SUB-50 NM; TRANSITION REGIONS; ULTRAVIOLET LIGHT-EMITTING DEVICES; UV LEDS; ZNO; ZNO NANOWIRE ARRAYS; ZNO NANOWIRES;

CARRIER CONCENTRATION; DOPING (ADDITIVES); LIGHT EMITTING DIODES; NANOWIRES; PHOSPHORUS; ULTRAVIOLET RADIATION; ZINC;

ZINC OXIDE;

NANOMATERIAL; ZINC OXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE; ULTRAVIOLET RADIATION;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHTING; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES; ULTRAVIOLET RAYS; ZINC OXIDE;

EID: 78449266567     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl101907h     Document Type: Article

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