Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Hwang, Dae Kue ^a   Kim, Hyun Sik ^a   Lim, Jae Hong ^a   Oh, Jin Yong ^a   Yang, Jin Ho ^a   Park, Seong Ju ^a   Kim, Kyoung Kook ^b   Look, D C ^c   Park, Y S ^d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c WRIGHT STATE UNIVERSITY   (United States)

^d Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP OPTOELECTRONIC RESEARCH; RADIATIVE RECOMBINATION; RADIO FREQUENCY MAGNETRON SPUTTERING; VALENCE BANDS;

BINDING ENERGY; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRON TRANSITIONS; EXCITONS; LASER BEAM EFFECTS; MAGNETRON SPUTTERING; PHOSPHORUS; PHOTOLUMINESCENCE; ZINC OXIDE;

THIN FILMS;

EID: 20844459633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1895480     Document Type: Article

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