Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source

Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 458-462

  Chen, Fugang ^a   Ye, Zhizhen ^a   Xu, Weizhong ^a   Zhao, Binghui ^a   Zhu, Liping ^a   Lv, Jianguo ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Doping; A1. p type conduction; A3. Metalorganic chemical vapor deposition; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

BINDING ENERGY; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; OXIDATION; OXYGEN; PHOSPHORUS; SEMICONDUCTOR DOPING; SPECTROMETRY; ZINC COMPOUNDS; ZINC OXIDE;

DIETHYLZINC (DEZ); DOPING; ENERGY DISPERSIVE SPECTROMETRY (EDS); P-TYPE CONDUCTION; SEMICONDUCTING II-IV MATERIALS;

THIN FILMS;

EID: 22144487769     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.041     Document Type: Article

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