ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Zhuge, F ^a   Zhu, L P ^a   Ye, Z Z ^a   Ma, D W ^a   Lu, J G ^a   Huang, J Y ^a   Wang, F Z ^a   Ji, Z G ^a   Zhang, S B ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; METAL CONTACTS; P-N JUNCTIONS; REACTIVE MAGNETRON SPUTTERING;

ALUMINUM; ANNEALING; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; NITROGEN; OHMIC CONTACTS; OPTIMIZATION; ZINC OXIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 24644514553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2012521     Document Type: Article

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