Improved N-Al codoped p-type ZnO thin films by introduction of a homo-buffer layer

Journal of Crystal Growth

Volumn 274, Issue 3-4, 2005, Pages 425-429

  Lu, J G ^a   Zhu, L P ^a   Ye, Z Z ^a   Zeng, Y J ^a   Zhuge, F ^a   Zhao, B H ^a   Ma, D W ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A1. Doping; A1. p type ondution; A3. DC reative magnetron sputtering; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HALL EFFECT; HIGH TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; ZINC COMPOUNDS; ZINC OXIDE;

HOMO-BUFFER LAYERS; P-TYPE ONDUTION; REACTIVE MAGNETRON SPUTTERING (RMS); SEMICONDUCTING II-VI MATERIALS;

THIN FILMS;

EID: 12244271087     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.019     Document Type: Article

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