Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer

Applied Surface Science

Volumn 257, Issue 10, 2011, Pages 4685-4688

  Zhao, Wang ^a   Zhao, Long ^a   Shi, Zhifeng ^a   Xia, Xiaochuan ^b   Li, Xiangping ^b   Dong, Xin ^a   Chang, Yuchun ^a   Zhang, Baolin ^a   Du, Guotong ^a,b  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Arsenic; Light emitting diode; Metal organic chemical vapor deposition; ZnO homojunction

Indexed keywords

ARSENIC; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INDUSTRIAL CHEMICALS; ITO GLASS; LIGHT; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SUBSTRATES; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); CURRENT-VOLTAGE MEASUREMENTS; DOPING CONCENTRATION; ELECTROLUMINESCENCE EMISSION; HOMOJUNCTION; LIGHT EMITTING DIODE (LED); METAL ORGANIC; RECTIFYING BEHAVIORS;

ELECTROLUMINESCENCE;

EID: 79551537481     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.12.122     Document Type: Article

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