The origin of p -type conduction in (P, N) codoped ZnO

Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

  Tian, Ren Yu ^a   Zhao, Yu Jun ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; CO-DOPED; CO-DOPED ZNO; DOPED ZNO; EQUILIBRIUM CONDITIONS; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; IMPURITY BANDS; IONIZATION ENERGIES; OXYGEN-POOR; P TYPE ZNO; P-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; RICH CONDITIONS; VALENCE-BAND MAXIMUMS; ZINC VACANCY; ZNO;

DEFECTS; DOPING (ADDITIVES); GALLIUM; OXYGEN; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE; ZIRCONIUM;

ZINC;

EID: 69749098336     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3195060     Document Type: Article

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