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Volumn 109, Issue 8, 2011, Pages

Nitrogen doped-ZnO/n-GaN heterojunctions

(10) Chen, Xin Yi a Fang, Fang a Ng, Alan M C a Djurišič, Aleksandra B a Cheah, Kok Wai b Ling, Chi Chung a Chan, Wai Kin a Fong, Patrick W K c Lui, Hsian Fei c Surya, Charles c

a UNIVERSITY OF HONG KONG (Hong Kong)

b HONG KONG BAPTIST UNIVERSITY (Hong Kong)

c HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT PRECURSORS; GROWTH CONDITIONS; IMPURITY CONCENTRATION; NATIVE DEFECT; NITRATE PRECURSORS; NITROGEN-DOPED; RECTIFYING PROPERTIES; ZINC ACETATE; ZINC NITRATES; ZN PRECURSORS; ZNO; ZNO NANOROD;

DISTILLATION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; NANORODS; ZINC;

ZINC OXIDE;

EID: 79955721210 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575178 Document Type: Article

Times cited : (5)

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