P-type conduction characteristics of lithium-doped ZnO nanowires

Advanced Materials

Volumn 23, Issue 36, 2011, Pages 4183-4187

  Lee, Junseok ^a   Cha, Seungnam ^b   Kim, Jongmin ^b   Nam, Hyewon ^a   Lee, Sanghyo ^a   Ko, Wonbae ^a   Wang, Kang L ^c   Park, Jeagun ^a   Hong, Jinpyo ^a  

^a Hanyang University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

lithium; nanowires; p type characteristics; ZnO

Indexed keywords

HOMOJUNCTION DIODES; HYDROTHERMAL TECHNIQUES; LI SUBSTITUTION; P TYPE ZNO; P-TYPE; P-TYPE CONDUCTION; POST ANNEALING; THERMALLY INDUCED; ZNO; ZNO NANOWIRES; ZNO THIN FILM;

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; NANOWIRES; ZINC OXIDE;

LITHIUM;

LITHIUM; NANOWIRE; NITRATE; WATER; ZINC OXIDE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; ELECTRIC CONDUCTIVITY;

ELECTRIC CONDUCTIVITY; LITHIUM; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOWIRES; NITRATES; WATER; ZINC OXIDE;

EID: 80053206496     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201101376     Document Type: Article

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