Study on the Hall-effect and photoluminescence of N-doped p-type ZnO thin films

Materials Letters

Volumn 61, Issue 1, 2007, Pages 41-44

  Zeng, Y J ^a   Ye, Z Z ^a   Xu, W Z ^a   Liu, B ^b   Che, Y ^b   Zhu, L P ^a   Zhao, B H ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b IMRA AMERICA INC   (United States)

Author keywords

Epitaxial growth; p type conductivity; Semiconductors; ZnO

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; HALL EFFECT; PHOTOLUMINESCENCE; ZINC OXIDE;

FREE TO NEUTRAL ACCEPTOR EMISSIONS; P-TYPE CONDUCTIVITY; PHOTOLUMINESCENCE SPECTRA; VALENCE BANDS;

THIN FILMS;

EID: 33750623727     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.04.001     Document Type: Article

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