Formation of p-type ZnMgO thin films by In-N codoping method

Applied Surface Science

Volumn 256, Issue 3, 2009, Pages 627-630

  Gong, L ^a   Ye, Z Z ^a   Lu, J G ^a   Zhu, L P ^a   Huang, J Y ^a   Zhao, B H ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Characterization; Doping; Oxides; Physical vapor deposition; Zinc compounds

Indexed keywords

CHARACTERIZATION; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRIC RECTIFIERS; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; OXIDES; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS; ZINC OXIDE; ZINC SULFIDE;

C-AXIS ORIENTATIONS; CRYSTAL QUALITIES; NITROGEN INCORPORATION; P-N HOMOJUNCTIONS; P-TYPE BEHAVIORS; P-TYPE CONDUCTION; REACTIVE MAGNETRON SPUTTERING; RECTIFICATION BEHAVIOR;

MAGNESIUM COMPOUNDS;

EID: 71749120128     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.08.015     Document Type: Article

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