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Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

(7) Pan, X H a,b Guo, W b Ye, Z Z a Liu, B c Che, Y c He, H P a Pan, X Q b

a ZHEJIANG UNIVERSITY (China)

b UNIVERSITY OF MICHIGAN (United States)

c IMRA AMERICA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ACCEPTOR STATE; OXYGEN PLASMAS; OXYGEN-RICH CONDITIONS; P-TYPE BEHAVIORS; P-TYPE ZNO FILM; PHOTOLUMINESCENCE SPECTRUM; SB DOPING; SB-DOPED; SB-DOPED P -TYPE ZNO FILMS; SI (100) SUBSTRATE;

ANTIMONY; DOPING (ADDITIVES); METALLIC FILMS; OPTICAL PROPERTIES; OXYGEN; PLASMA DEPOSITION; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

ZINC;

EID: 67649532187 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3126518 Document Type: Article

Times cited : (38)

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