Annealing effects on the p-type ZnO films fabricated on GaAs substrate by atmospheric pressure metal organic chemical vapor deposition

Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 1980-1983

  Huang, Yen Chin ^a   Weng, Li Wei ^a   Uen, Wu Yih ^a   Lan, Shan Ming ^a   Li, Zhen Yu ^b   Liao, Sen Mao ^a   Lin, Tai Yuan ^c   Yang, Tsun Neng ^d  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^d INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

Atmospheric pressure metal organic chemical vapor deposition; Electrical properties; Optical properties; P type conductivity; Photoluminescence; Post annealing; ZnO

Indexed keywords

ELECTRICAL PROPERTY; METALORGANIC CHEMICAL VAPOR DEPOSITION; P-TYPE CONDUCTIVITY; POST ANNEALING; ZNO;

ANNEALING; ARSENIC; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ATMOSPHERICS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; HOLE CONCENTRATION; INDUSTRIAL CHEMICALS; METAL ANALYSIS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

OPTICAL FILMS;

EID: 78651373982     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.10.108     Document Type: Article

References (26)

1. X.L. Guo, J.H. Choi, H. Tabata, and T. Kawai Jpn. J. Appl. Phys. 40 2001 L177
2. A. Tsukazaki, M. Kubota, A. Ohtomo, T. Ohura, K. Ohtani, H. Ohno, S.F. Chichibu, and M. Kawasaki Jpn. J. Appl. Phys. 44 2005 L643
3. J.D. Ye, S.L. Gu, S.M. Zhu, W. Liu, S.M. Liu, R. Zhang, Y. Shi, and Y.D. Zheng Appl. Phys. Lett. 88 2006 182112
4. S.B. Zhang, S.H. Wei, and A. Zunger Phys. Rev. B 63 2001 075205
5. F. Oba, S. Nishitani, S. Isotani, H. Adachi, and I. Tanaka J. Appl. Phys. 90 2001 824
6. Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong, and H.W. White J. Cryst. Growth 216 2000 330
7. K.K. Kim, H.S. Kim, D.K. Hwang, J.H. Hong, and S.J. Park Appl. Phys. Lett. 83 2003 63
8. D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, and G. Cantwell Appl. Phys. Lett. 81 2002 1830
9. W.Z. Xu, Z.Z. Ye, T. Zhou, B.H. Zhao, L.P. Zhu, and J.Y. Huang J. Cryst. Growth 265 2004 133
10. J.L. Lyons, A. Janotti, and C.G. Van de Valle Appl. Phys. Lett. 95 2009 252105
11. S. Limpijumnong, S.B. Zhang, S.H. Wei, and C.H. Park Phys. Rev. Lett. 92 2004 155504
12. U. Wahl, E. Rita, J.G. Correia, A.C. Marques, E. Alves, and J.C. Soares Phys. Rev. Lett. 95 2004 215503
13. H.S. Kang, G.H. Kim, D.L. Kim, H.W. Chang, B.D. Ahn, and S.Y. Lee Appl. Phys. Lett. 89 2006 181103
14. P. Wang, N.F. Chen, Z.G. Yin, F. Yang, C.T. Peng, R.X. Dai, and Y.M. Bai J. Appl. Phys. 100 2006 043704
15. J.C. Sun, J.Z. Zhao, H.W. Liang, J.M. Bian, L.Z. Hu, H.Q. Zhang, X.P. Liang, W.F. Liu, and G.T. Du Appl. Phys. Lett. 90 2007 121128
16. J.C. Fan, and Z. Xie Mater. Sci. Eng. B 150 2008 61 65
17. H.F. Liu, A.S.W. Wong, G.X. Hu, and H. Gong J. Cryst. Growth 310 2008 4305 4308
18. Y. Ma, G.T. Du, S.R. Yang, Z.T. Li, B.J. Zhao, X.T. Yang, T.P. Yang, Y.T. Zhang, and D.L. Liu J. Appl. Phys. 95 2004 6268
19. Y.C. Huang, Z.Y. Li, L.W. Weng, W.Y. Uen, S.M. Lan, S.M. Liao, T.Y. Lin, Y.H. Huang, J.W. Chen, and T.N. Yang J. Vac. Sci. Technol. A 28 2010 1307
20. K.H. Bang, D.K. Hwang, S.W. Lim, and J.M. Myoung J. Cryst. Growth 250 2003 437
21. W.Y. Liang, and A.D. Yoffe Phys. Rev. Lett. 20 1968 59
22. Y.R. Ryu, T.S. Lee, and H.W. White Appl. Phys. Lett. 83 2003 87
23. J. Sun, H. Liang, J. Zhao, Q. Feng, J. Bian, Z. Zhao, H. Zhang, Y. Luo, L. Hu, and G. Du Appl. Surf. Sci. 254 2008 7482
24. S.H. Jeong, B.S. Kim, and B.T. Lee Appl. Phys. Lett. 82 2003 2625
25. A. Teke, Ü. Özgür, S. Doan, X. Gu, H. Morko, B. Nemeth, J. Nause, and H.O. Everitt Phys. Rev. B 70 2004 195207
26. W.J. Turner, A.S. Fischler, and W.E. Reese Phys. Rev. 12 1961 759