Room temperature electroluminescence from the ZnO homojunction grown on an n+-Si substrate by metal-organic chemical vapor deposition

Semiconductor Science and Technology

Volumn 23, Issue 2, 2008, Pages

  Liang, H W ^a   Feng, Q J ^a,b   Sun, J C ^a   Zhao, J Z ^a   Bian, J M ^a   Hu, L Z ^a   Zhang, H Q ^a   Luo, Y M ^a   Du, G T ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b LIAONING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

HOMOJUNCTIONS; RECTIFYING BEHAVIORS;

SEMICONDUCTOR JUNCTIONS;

EID: 42549108724     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/2/025014     Document Type: Article

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