Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Nature Materials

Volumn 4, Issue 1, 2005, Pages 42-45

  Tsukazaki, Atsushi ^a   Ohtomo, Akira ^a   Onuma, Takeyoshi ^b   Ohtani, Makoto ^a   Makino, Takayuki ^c   Sumiya, Masatomo ^d   Ohtani, Keita ^e   Chichibu, Shigefusa F ^b,c   Fuke, Syunrou ^d   Segawa, Yusaburou ^c   Ohno, Hideo ^e   Koinuma, Hideomi ^f,g   Kawasaki, Masashi ^a,g  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^d SHIZUOKA UNIVERSITY   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^g NONE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EXCITONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; ZINC OXIDE;

ATOMIC NITROGEN SOURCES; EXCITON STABILITY; VAPOR-PHASE TRANSPORT;

LIGHT EMITTING DIODES;

EID: 19944421735     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1284     Document Type: Article

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